Charge-coupled device
A charge-coupled device (CCD) is an integrated circuit containing an array of linked, or coupled, capacitors. Under the control of an external circuit, each capacitor can transfer its electric charge to a neighboring capacitor. CCD sensors are a major technology used in digital imaging. In a CCD image sensor, pixels are represented by p-doped metal–oxide–semiconductor (MOS) capacitors. These MOS capacitors, the basic building blocks of a CCD, are biased above the threshold for inversion when image acquisition begins, allowing the conversion of incoming photons into electron charges at the semiconductor-oxide interface; the CCD is then used to read out these charges. Although CCDs are not the only technology to allow for light detection, CCD image sensors are widely used in professional, medical, and scientific applications where high-quality image data are required. In applications with less exacting quality demands, such as consumer and professional digital cameras, active pixel sensors, also known as CMOS sensors (complementary MOS sensors), are generally used. However, the large quality advantage CCDs enjoyed early on has narrowed over time and since the late 2010s CMOS sensors are the dominant technology, having largely if not completely replaced CCD image sensors. == History == The basis for the CCD is the metal–oxide–semiconductor (MOS) structure, with MOS capacitors being the basic building blocks of a CCD, and a depleted MOS structure used as the photodetector in early CCD devices. In the late 1960s, Willard Boyle and George E. Smith at Bell Labs were researching MOS technology while working on semiconductor bubble memory. They realized that an electric charge was the analog of the magnetic bubble and that it could be stored on a tiny MOS capacitor. As it was fairly straightforward to fabricate a series of MOS capacitors in a row, they connected a suitable voltage to them so that the charge could be stepped along from one to the next. This led to the invention of the charge-coupled device by Boyle and Smith in 1969. They conceived of the design of what they termed, in their notebook, "Charge 'Bubble' Devices". The initial paper describing the concept in April 1970 listed possible uses as memory, a delay line, and an imaging device. The device could also be used as a shift register. The essence of the design was the ability to transfer charge along the surface of a semiconductor from one storage capacitor to the next. The first experimental device demonstrating the principle was a row of closely spaced metal squares on an oxidized silicon surface electrically accessed by wire bonds. It was demonstrated by Gil Amelio, Michael Francis Tompsett and George Smith in April 1970. This was the first experimental application of the CCD in image sensor technology, and used a depleted MOS structure as the photodetector. The first patent (U.S. patent 4,085,456) on the application of CCDs to imaging was assigned to Tompsett, who filed the application in 1971. The first working CCD made with integrated circuit technology was a simple 8-bit shift register, reported by Tompsett, Amelio and Smith in August 1970. This device had input and output circuits and was used to demonstrate its use as a shift register and as a crude eight pixel linear imaging device. Development of the device progressed at a rapid rate. By 1971, Bell researchers led by Michael Tompsett were able to capture images with simple linear devices. Several companies, including Fairchild Semiconductor, RCA and Texas Instruments, picked up on the invention and began development programs. Fairchild's effort, led by ex-Bell researcher Gil Amelio, was the first with commercial devices, and by 1974 had a linear 500-element device and a 2D 100 × 100 pixel device. Peter L. P. Dillon, a scientist at Kodak Research Labs, invented the first color CCD image sensor by overlaying a color filter array on this Fairchild 100 x 100 pixel Interline CCD starting in 1974. Steven Sasson, an electrical engineer working for the Kodak Apparatus Division, invented a digital still camera using this same Fairchild 100 × 100 CCD in 1975. The interline transfer (ILT) CCD device was proposed by L. Walsh and R. Dyck at Fairchild in 1973 to reduce smear and eliminate a mechanical shutter. To further reduce smear from bright light sources, the frame-interline-transfer (FIT) CCD architecture was developed by K. Horii, T. Kuroda and T. Kunii at Matsushita (now Panasonic) in 1981. The first KH-11 KENNEN reconnaissance satellite equipped with charge-coupled device array (800 × 800 pixels) technology for imaging was launched in December 1976. Under the leadership of Kazuo Iwama, Sony started a large development effort on CCDs involving a significant investment. Eventually, Sony managed to mass-produce CCDs for their camcorders. Before this happened, Iwama died in August 1982. Subsequently, a CCD chip was placed on his tombstone to acknowledge his contribution. The first mass-produced consumer CCD video camera, the CCD-G5, was released by Sony in 1983, based on a prototype developed by Yoshiaki Hagiwara in 1981. Early CCD sensors suffered from shutter lag. This was largely resolved with the invention of the pinned photodiode (PPD). It was invented by Nobukazu Teranishi, Hiromitsu Shiraki and Yasuo Ishihara at NEC in 1980. They recognized that lag can be eliminated if the signal carriers could be transferred from the photodiode to the CCD. This led to their invention of the pinned photodiode, a photodetector structure with low lag, low noise, high quantum efficiency and low dark current. It was first publicly reported by Teranishi and Ishihara with A. Kohono, E. Oda and K. Arai in 1982, with the addition of an anti-blooming structure. The new photodetector structure invented at NEC was given the name "pinned photodiode" (PPD) by B.C. Burkey at Kodak in 1984. In 1987, the PPD began to be incorporated into most CCD devices, becoming a fixture in consumer electronic video cameras and then digital still cameras. Since then, the PPD has been used in nearly all CCD sensors and then CMOS sensors. In January 2006, Boyle and Smith were awarded the National Academy of Engineering Charles Stark Draper Prize, and in 2009 they were awarded the Nobel Prize for Physics for their invention of the CCD concept. Michael Tompsett was awarded the 2010 National Medal of Technology and Innovation, for pioneering work and electronic technologies including the design and development of the first CCD imagers. He was also awarded the 2012 IEEE Edison Medal for "pioneering contributions to imaging devices including CCD Imagers, cameras and thermal imagers". == Basics of operation == In a CCD for capturing images, there is a photoactive region (an epitaxial layer of silicon), and a transmission region made out of a shift register (the CCD, properly speaking). An image is projected through a lens onto the capacitor array (the photoactive region), causing each capacitor to accumulate an electric charge proportional to the light intensity at that location. A one-dimensional array, used in line-scan cameras, captures a single slice of the image, whereas a two-dimensional array, used in video and still cameras, captures a two-dimensional picture corresponding to the scene projected onto the focal plane of the sensor. Once the array has been exposed to the image, a control circuit causes each capacitor to transfer its contents to its neighbor (operating as a shift register). The last capacitor in the array dumps its charge into a charge amplifier, which converts the charge into a voltage. By repeating this process, the controlling circuit converts the entire contents of the array in the semiconductor to a sequence of voltages. In a digital device, these voltages are then sampled, digitized, and usually stored in memory; in an analog device (such as an analog video camera), they are processed into a continuous analog signal (e.g. by feeding the output of the charge amplifier into a low-pass filter), which is then processed and fed out to other circuits for transmission, recording, or other processing. == Detailed physics of operation == === Charge generation === Before the MOS capacitors are exposed to light, they are biased into the depletion region; in n-channel CCDs, the silicon under the bias gate is slightly p-doped or intrinsic. The gate is then biased at a positive potential, above the threshold for strong inversion, which will eventually result in the creation of an n channel below the gate as in a MOSFET. However, it takes time to reach this thermal equilibrium: up to hours in high-end scientific cameras cooled at low temperature. Initially after biasing, the holes are pushed far into the substrate, and no mobile electrons are at or near the surface; the CCD thus operates in a non-equilibrium state called deep depletion. Then, when electron–hole pairs are generated in the depletion region, they are separated by the electric field, the elec
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